Dependence of Drain Induced Barrier Lowering for Ratio of Channel Length vs. Thickness of Asymmetric Double Gate MOSFET

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چکیده

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ژورنال

عنوان ژورنال: Journal of the Korea Institute of Information and Communication Engineering

سال: 2015

ISSN: 2234-4772

DOI: 10.6109/jkiice.2015.19.6.1399